Kuramochi Eiichi, Grossman Elan, Nozaki Kengo, Takeda Koji, Shinya Akihiko, Taniyama Hideaki, Notomi Masaya
Opt Lett. 2014 Oct 1;39(19):5780-3. doi: 10.1364/OL.39.005780.
We report simple systematic hole-shifting rules applicable to any Lx (x:2,3,4,5,…) nanocavity. The rules specify six sets of holes to be tuned with only two or three shift parameters. While keeping the same cavity wavelength and nearly the same mode volume, the new rule increases the Q factor by nearly one order of magnitude compared with an edge-hole-shifted Lx nanocavity. The Q factor of the high-order mode is also greatly increased. This merit is obvious from the maximum experimental Q factors of over 500,000 at L2 and of over 1,000,000 at L3, L4, and L5 achieved in Si photonic crystals.
我们报道了适用于任何Lx（x = 2,3,4,5,…）纳米腔的简单系统的空穴移动规则。这些规则指定了六组仅用两个或三个移动参数就能调整的空穴。在保持相同的腔波长和几乎相同的模式体积的情况下，与边缘空穴移动的Lx纳米腔相比，新规则使品质因数提高了近一个数量级。高阶模式的品质因数也大大提高。从硅光子晶体中实现的L2的超过500,000以及L3、L4和L5的超过1,000,000的最大实验品质因数可以明显看出这一优点。
