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壳层厚度对基于 CdSe/Zn1-X CdX S 核/壳结构量子点的发光器件性能的影响。

Influence of shell thickness on the performance of light-emitting devices based on CdSe/Zn1-X CdX S core/shell heterostructured quantum dots.

机构信息

Division of Chemistry, Los Alamos National Laboratory, New Mexico, 87544, USA.

出版信息

Adv Mater. 2014 Dec 17;26(47):8034-40. doi: 10.1002/adma.201403620. Epub 2014 Nov 10.

Abstract

CdSe/Zn1-X CdX S core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-X CdX S QDs (e.g., CdSe core radius of 2 nm and Zn1-X CdX S shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2) ) of deep-red emission, along with improved device stability.

摘要

研究了具有不同壳厚的 CdSe/Zn1-X CdX S 核/壳异质结构量子点(QDs)作为一系列电致发光器件中的活性材料。“巨型”CdSe/Zn1-X CdX S QDs(例如,CdSe 核半径为 2nm,Zn1-X CdX S 壳厚为 6.3nm)表现出高器件效率(峰值 EQE=7.4%)和深红光发射的超高亮度(>100000cdm-2),以及改进的器件稳定性。

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