Timilsina R, Tan S, Livengood R, Rack P D
University of Tennessee Knoxville, TN 37996, USA.
Nanotechnology. 2014 Dec 5;25(48):485704. doi: 10.1088/0957-4484/25/48/485704. Epub 2014 Nov 12.
A three dimensional Monte Carlo simulation program was developed to model physical sputtering and to emulate vias nanomachined by the gas field ion microscope. Experimental and simulation results of focused neon ion beam induced sputtering of copper are presented and compared to previously published experiments. The simulation elucidates the nanostructure evolution during the physical sputtering of high aspect ratio nanoscale features. Quantitative information such as the energy-dependent sputtering yields, dose dependent aspect ratios, and resolution-limiting effects are discussed. Furthermore, the nuclear energy loss and implant concentration beneath the etch front is correlated with the sub-surface damage revealed by transmission electron microscopy at different beam energies.
开发了一个三维蒙特卡罗模拟程序，用于模拟物理溅射并模拟气场离子显微镜加工的纳米孔。给出了聚焦氖离子束诱导铜溅射的实验和模拟结果，并与先前发表的实验进行了比较。该模拟阐明了高纵横比纳米级特征物理溅射过程中的纳米结构演变。讨论了诸如能量相关溅射产额、剂量相关纵横比和分辨率限制效应等定量信息。此外，蚀刻前沿下方的核能损失和注入浓度与不同束能量下透射电子显微镜揭示的亚表面损伤相关。
