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室温拉曼原子存储器读出中的哈密顿量设计

Hamiltonian design in readout from room-temperature Raman atomic memory.

作者信息

Dąbrowski Michał, Chrapkiewicz Radosław, Wasilewski Wojciech

出版信息

Opt Express. 2014 Oct 20;22(21):26076-90. doi: 10.1364/OE.22.026076.

DOI:10.1364/OE.22.026076
PMID:25401640
Abstract

We present an experimental demonstration of the Hamiltonian manipulation in light-atom interface in Raman-type warm rubidium-87 vapor atomic memory. By adjusting the detuning of the driving beam we varied the relative contributions of the Stokes and anti-Stokes scattering to the process of four-wave mixing which reads out a spatially multimode state of atomic memory. We measured the temporal evolution of the readout fields and the spatial intensity correlations between write-in and readout as a function of detuning with the use of an intensified camera. The correlation maps enabled us to resolve between the anti-Stokes and the Stokes scattering and to quantify their contributions. Our experimental results agree quantitatively with a simple, plane-wave theoretical model we provide. They allow for a simple interpretation of the coaction of the anti-Stokes and the Stokes scattering at the readout stage. The Stokes contribution yields additional, adjustable gain at the readout stage, albeit with inevitable extra noise. Here we provide a simple and useful framework to trace it and the results can be utilized in the existing atomic memories setups. Furthermore, the shown Hamiltonian manipulation offers a broad range of atom-light interfaces readily applicable in current and future quantum protocols with atomic ensembles.

摘要

我们展示了在拉曼型热铷 - 87 蒸汽原子存储器的光 - 原子界面中哈密顿量操控的实验演示。通过调整驱动光束的失谐,我们改变了斯托克斯散射和反斯托克斯散射对四波混频过程的相对贡献,该过程读出原子存储器的空间多模状态。我们使用增强型相机测量了读出场的时间演化以及写入和读出之间的空间强度相关性作为失谐的函数。相关映射使我们能够分辨反斯托克斯散射和斯托克斯散射,并量化它们的贡献。我们的实验结果与我们提供的一个简单平面波理论模型在定量上一致。它们允许对读出阶段反斯托克斯散射和斯托克斯散射的共同作用进行简单解释。斯托克斯贡献在读取阶段产生额外的、可调节的增益,尽管不可避免地会有额外噪声。在这里,我们提供了一个简单且有用的框架来追踪它,并且结果可用于现有的原子存储器设置。此外,所展示的哈密顿量操控提供了广泛的原子 - 光界面,可轻松应用于当前和未来与原子系综相关的量子协议。

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Hamiltonian design in readout from room-temperature Raman atomic memory.室温拉曼原子存储器读出中的哈密顿量设计
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