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硅的开放式骨架同素异形体的合成。

Synthesis of an open-framework allotrope of silicon.

机构信息

Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015, USA.

1] Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015, USA [2] IMPMC, UPMC Sorbonne Universités, UMR CNRS 7590, Muséum National d'Histoire Naturelle, IRD UMR 206, 75005 Paris, France.

出版信息

Nat Mater. 2015 Feb;14(2):169-73. doi: 10.1038/nmat4140. Epub 2014 Nov 17.

Abstract

Silicon is ubiquitous in contemporary technology. The most stable form of silicon at ambient conditions takes on the structure of diamond (cF8, d-Si) and is an indirect bandgap semiconductor, which prevents it from being considered as a next-generation platform for semiconductor technologies. Here, we report the formation of a new orthorhombic allotrope of silicon, Si24, using a novel two-step synthesis methodology. First, a Na4Si24 precursor was synthesized at high pressure; second, sodium was removed from the precursor by a thermal 'degassing' process. The Cmcm structure of Si24, which has 24 Si atoms per unit cell (oC24), contains open channels along the crystallographic a-axis that are formed from six- and eight-membered sp(3) silicon rings. This new allotrope possesses a quasidirect bandgap near 1.3 eV. Our combined experimental/theoretical study expands the known allotropy for element fourteen and the unique high-pressure precursor synthesis methodology demonstrates the potential for new materials with desirable properties.

摘要

硅在当代技术中无处不在。在环境条件下,最稳定的硅形式呈现出钻石(cF8,d-Si)的结构,并且是间接带隙半导体,这阻止了它被认为是下一代半导体技术的平台。在这里,我们使用一种新颖的两步合成方法报告了硅的新正交同素异形物 Si24 的形成。首先,在高压下合成 Na4Si24 前体; 其次,通过热“除气”过程从前体中除去钠。Si24 的 Cmcm 结构,每个单元包含 24 个硅原子(oC24),沿晶体学 a 轴包含由六元和八元 sp(3)硅环形成的开放通道。这种新的同素异形体具有接近 1.3 eV 的准直接带隙。我们的综合实验/理论研究扩展了对十四号元素的已知同素异形,独特的高压前体合成方法证明了具有理想性质的新材料的潜力。

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