Cai Songting, Liu Zihang, Sun Jianyong, Li Rui, Fei Weidong, Sui Jiehe
School of Materials Science and Engineering, P.O. Box 405, Harbin Institute of Technology, Harbin, 150001, China.
Dalton Trans. 2015 Jan 21;44(3):1046-51. doi: 10.1039/c4dt03059a.
AgSbSe2 possesses extremely low thermal conductivity and high Seebeck coefficient, but the low electronic conductivity leads to a low ZT value. In this paper, Na is used to substitute Sb to improve the electronic conductivity. The results show that Na doping not only improves the power factor caused by the enhanced carrier concentration, but also decreases the thermal conductivity due to point defects, nanoscale stacking faults and Na-rich precipitate. Consequently, a high ZT value of 0.92 is achieved in the AgSb0.99Na0.01Se2 sample.
AgSbSe2具有极低的热导率和高塞贝克系数，但低电子电导率导致其ZT值较低。在本文中，使用Na替代Sb以提高电子电导率。结果表明，Na掺杂不仅提高了由载流子浓度增加引起的功率因子，还由于点缺陷、纳米级堆垛层错和富Na析出物而降低了热导率。因此，在AgSb0.99Na0.01Se2样品中实现了0.92的高ZT值。
