Zheng Jian-Yun, Bao Shan-Hu, Lv Yan-Hong, Jin Ping
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences , Shanghai 200050, People's Republic of China.
ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22243-9. doi: 10.1021/am506013w. Epub 2014 Dec 11.
Cu-doped anatase TiO2 films grown by magnetron sputtering at room temperature showed the unexpected observation of room-temperature ferromagnetism, which was enhanced or destroyed corresponding to low or high impurity concentration via vacuum annealing. On the basis of the analysis of composition and structure, the most important factor for activating ferromagnetism can be identified as the creation of grain boundary defects. In addition, oxygen defects can be the dominating factor for increasing the saturation moment of the 0.19 at. % Cu-doped TiO2 film from 0.564 to 26.41 emu/cm(3). These results help elucidate the origin of ferromagnetism and emphasize the role of oxygen defects for the application of ferromagnetic films.
通过磁控溅射在室温下生长的铜掺杂锐钛矿型二氧化钛薄膜表现出室温铁磁性这一意外现象，通过真空退火，该室温铁磁性会随着杂质浓度的高低相应增强或被破坏。基于成分和结构分析，激活铁磁性的最重要因素可确定为晶界缺陷的产生。此外，氧缺陷可能是使0.19原子百分比的铜掺杂二氧化钛薄膜的饱和磁矩从0.564emu/cm³增加到26.41emu/cm³的主导因素。这些结果有助于阐明铁磁性的起源，并强调氧缺陷在铁磁薄膜应用中的作用。
