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离子辐照铱(111)上的石墨烯形成界面碳纳米片。

Interfacial carbon nanoplatelet formation by ion irradiation of graphene on iridium(111).

机构信息

II. Physikalisches Institut, Universität zu Köln , Zülpicher Straße 77, 50937 Köln, Germany.

出版信息

ACS Nano. 2014 Dec 23;8(12):12208-18. doi: 10.1021/nn503874n. Epub 2014 Dec 12.

Abstract

We expose epitaxial graphene (Gr) on Ir(111) to low-energy noble gas ion irradiation and investigate by scanning tunneling microscopy and atomistic simulations the behavior of C atoms detached from Gr due to ion impacts. Consistent with our density functional theory calculations, upon annealing Gr nanoplatelets nucleate at the Gr/Ir(111) interface from trapped C atoms initially displaced with momentum toward the substrate. Making use of the nanoplatelet formation phenomenon, we measure the trapping yield as a function of ion energy and species and compare the values to those obtained using molecular dynamics simulations. Thereby, complementary to the sputtering yield, the trapping yield is established as a quantity characterizing the response of supported 2D materials to ion exposure. Our findings shed light on the microscopic mechanisms of defect production in supported 2D materials under ion irradiation and pave the way toward precise control of such systems by ion beam engineering.

摘要

我们将外延石墨烯 (Gr) 暴露于低能惰性气体离子辐照下,并通过扫描隧道显微镜和原子模拟研究了由于离子冲击而从 Gr 中脱离的 C 原子的行为。与我们的密度泛函理论计算一致,在退火过程中,Gr 纳米薄片从最初被动量推向衬底的捕获 C 原子在 Gr/Ir(111)界面处成核。利用纳米薄片的形成现象,我们测量了离子能量和种类对俘获产率的影响,并将测量值与分子动力学模拟得到的值进行了比较。因此,除了溅射产率之外,俘获产率作为一种表征支撑二维材料对离子暴露响应的量被建立起来。我们的发现揭示了离子辐照下支撑二维材料中缺陷产生的微观机制,并为通过离子束工程精确控制此类系统铺平了道路。

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