光学触发红外探测器。

Optically triggered infrared photodetector.

机构信息

Instituto de Energía Solar, Universidad Politécnica de Madrid , ETSI Telecomunicación, 28040 Madrid, Spain.

出版信息

Nano Lett. 2015 Jan 14;15(1):224-8. doi: 10.1021/nl503437z. Epub 2014 Dec 12.

Abstract

We demonstrate a new class of semiconductor device: the optically triggered infrared photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2-6 μm range. The detection is optically triggered by a 590 nm light-emitting diode. Furthermore, the detection gain is achieved in our device without an increase of the noise level. The novel characteristics of OTIPs open up new possibilities for third generation infrared imaging systems ( Rogalski, A.; Antoszewski, J.; Faraone, L. J. Appl. Phys. 2009, 105 (9), 091101).

摘要

我们展示了一类新型半导体器件

光控红外光电探测器（OTIP）。该光电探测器基于一种新的物理原理，通过外部光可以实现对红外光的开启和关闭检测。我们的实验器件采用 InAs/AlGaAs 量子点技术制造，在 2-6μm 范围内演示了正常入射的红外探测。通过一个 590nm 的发光二极管进行光控触发。此外，在我们的器件中，无需增加噪声水平即可实现检测增益。OTIP 的新颖特性为第三代红外成像系统开辟了新的可能性（Rogalski，A.；Antoszewski，J.；Faraone，L. J. Appl. Phys. 2009, 105 (9), 091101）。