National Lab for Superconductivity, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
State Key Lab of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
Proc Natl Acad Sci U S A. 2014 Dec 30;111(52):18501-6. doi: 10.1073/pnas.1414094112. Epub 2014 Dec 11.
In high-temperature cuprate superconductors, it is now generally agreed that superconductivity is realized by doping an antiferromagnetic Mott (charge transfer) insulator. The doping-induced insulator-to-superconductor transition has been widely observed in cuprates, which provides important information for understanding the superconductivity mechanism. In the iron-based superconductors, however, the parent compound is mostly antiferromagnetic bad metal, raising a debate on whether an appropriate starting point should go with an itinerant picture or a localized picture. No evidence of doping-induced insulator-superconductor transition (or crossover) has been reported in the iron-based compounds so far. Here, we report an electronic evidence of an insulator-superconductor crossover observed in the single-layer FeSe film grown on a SrTiO3 substrate. By taking angle-resolved photoemission measurements on the electronic structure and energy gap, we have identified a clear evolution of an insulator to a superconductor with increasing carrier concentration. In particular, the insulator-superconductor crossover in FeSe/SrTiO3 film exhibits similar behaviors to that observed in the cuprate superconductors. Our results suggest that the observed insulator-superconductor crossover may be associated with the two-dimensionality that enhances electron localization or correlation. The reduced dimensionality and the interfacial effect provide a new pathway in searching for new phenomena and novel superconductors with a high transition temperature.
在高温铜酸盐超导体中,现在人们普遍认为超导是通过掺杂反铁磁莫特(电荷转移)绝缘体来实现的。掺杂诱导的绝缘-超导转变在铜酸盐中得到了广泛的观察,这为理解超导机制提供了重要信息。然而,在铁基超导体中,母体化合物大多是反铁磁不良金属,这引发了一个争论,即适当的起点应该是巡游图像还是局域图像。到目前为止,在铁基化合物中还没有报道掺杂诱导的绝缘-超导转变(或交叉)的证据。在这里,我们报告了在 SrTiO3 衬底上生长的单层 FeSe 薄膜中观察到的绝缘-超导交叉的电子证据。通过对电子结构和能隙进行角分辨光电子能谱测量,我们已经确定了随着载流子浓度的增加,从绝缘到超导的明显演化。特别是,FeSe/SrTiO3 薄膜中的绝缘-超导交叉表现出与在铜酸盐超导体中观察到的相似行为。我们的结果表明,观察到的绝缘-超导交叉可能与增强电子局域化或关联的二维性有关。降低的维度和界面效应为寻找具有高转变温度的新现象和新型超导体提供了新途径。