Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, South Korea.
ACS Nano. 2015 Jan 27;9(1):419-26. doi: 10.1021/nn5055909. Epub 2014 Dec 16.
A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. The memory device based on chitosan as a natural solid polymer electrolyte can be switched reproducibly between high and low resistance states. In addition, the data retention measurement confirmed the reliability of the chitosan-based nonvolatile memory device. The transparent Ag-embedded chitosan film showed an acceptable and comparable resistive switching behavior on the flexible plastic substrate as well. A cost-effective, environmentally benign memory device using chitosan satisfies the functional requirements of nonvolatile memory operations.
一种基于壳聚糖的溶液处理电阻式存储器件采用 Pt/Ag 掺杂壳聚糖/Ag 结构进行了演示。该记忆器件表现出可重复且可靠的双极性电阻开关特性。基于天然有机材料的记忆器件是下一代非易失性纳米电子学的一种很有前途的器件。基于壳聚糖的天然固态聚合物电解质的记忆器件可以在高电阻状态和低电阻状态之间可重复切换。此外，数据保持测量证实了基于壳聚糖的非易失性存储器件的可靠性。透明的嵌入 Ag 的壳聚糖薄膜在柔性塑料衬底上也表现出可接受且相当的电阻开关行为。使用壳聚糖的具有成本效益且环境友好的记忆器件满足非易失性存储操作的功能要求。
