Liu Jiang-Tao, Deng Xin-Hua, Yang Wen, Li Jun
Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, China.
Phys Chem Chem Phys. 2015 Feb 7;17(5):3303-8. doi: 10.1039/c4cp04717f. Epub 2014 Dec 19.
The optical absorption of nanoscale thickness semiconductor films on top of light-trapping structures based on optical interference effects combined with spectrum-splitting structures is theoretically investigated. Nearly perfect absorption over a broad spectrum range can be achieved in <100 nm thick films on top of a one-dimensional photonic crystal or metal films. This phenomenon can be attributed to interference induced photonic localization, which enhances the absorption and reduces the reflection of the films. Perfect solar absorption and low carrier thermalization loss can be achieved when the light-trapping structures with a wedge-shaped spacer layer or semiconductor films are combined with spectrum-splitting structures.
基于光学干涉效应并结合光谱分裂结构的光捕获结构之上的纳米级厚度半导体薄膜的光吸收进行了理论研究。在一维光子晶体或金属薄膜之上的<100nm厚的薄膜中，可以在宽光谱范围内实现近乎完美的吸收。这种现象可归因于干涉诱导的光子局域化，它增强了薄膜的吸收并减少了反射。当具有楔形间隔层的光捕获结构或半导体薄膜与光谱分裂结构相结合时，可以实现完美的太阳能吸收和低载流子热化损失。
