Manna S, Aluguri R, Bar R, Das S, Prtljaga N, Pavesi L, Ray S K
Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur-721 302, India.
Nanotechnology. 2015 Jan 30;26(4):045202. doi: 10.1088/0957-4484/26/4/045202. Epub 2015 Jan 6.
Photo-physical processes in Er-doped silica glass matrix containing Ge nanocrystals prepared by the sol-gel method are presented in this article. Strong photoluminescence at 1.54 μm, important for fiber optics telecommunication systems, is observed from the different sol-gel derived glasses at room temperature. We demonstrate that Ge nanocrystals act as strong sensitizers for Er(3+) ions emission and the effective Er excitation cross section increases by almost four orders of magnitude with respect to the one without Ge nanocrystals. Rate equations are considered to demonstrate the sensitization of erbium luminescence by Ge nanocrystals. Analyzing the erbium effective excitation cross section, extracted from the flux dependent rise and decay times, a Dexter type of short range energy transfer from a Ge nanocrystal to erbium ion is established.
本文介绍了通过溶胶-凝胶法制备的含锗纳米晶体的掺铒二氧化硅玻璃基质中的光物理过程。在室温下，从不同的溶胶-凝胶衍生玻璃中观察到了对光纤通信系统很重要的1.54μm处的强光致发光。我们证明，锗纳米晶体是铒（3+）离子发射的强敏化剂，相对于不含锗纳米晶体的情况，有效铒激发截面增加了近四个数量级。考虑速率方程来证明锗纳米晶体对铒发光的敏化作用。通过分析从与通量相关的上升和衰减时间中提取的铒有效激发截面，确定了从锗纳米晶体到铒离子的德克斯特型短程能量转移。
