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具有\(n = 2\)的双能带陈绝缘体中的拓扑量子跃迁。

Topological quantum transitions in a two-band Chern insulator with n = 2.

作者信息

Song Juntao, Zhang Yan-Yang, Li Yuxian, Sun Qing-feng

机构信息

Department of Physics and Hebei Advanced Thin Film Laboratory, Hebei Normal University, Hebei 050024, People's Republic of China.

出版信息

J Phys Condens Matter. 2015 Feb 4;27(4):045601. doi: 10.1088/0953-8984/27/4/045601. Epub 2015 Jan 8.

Abstract

Based on a two-band Chern insulator with Chern number n = 2, we study the transport properties and the topological phase transition induced by either an external magnetic field or disorder. In this paper, a characteristic topological phase transition from n = 2 to n = 0, which is in sharp contrast to the plateau-plateau transition in the integer quantum Hall effect, is observed. This unique feature of the phase transition should be ascribed to the minimal two-band feature of this high Chern insulator. We prove this result by studying the transport properties of many different geometrical structures and the evolution of the Chern number in the presence of magnetic fields and strong disorder.

摘要

基于具有陈数(n = 2)的两能带陈绝缘体,我们研究了由外部磁场或无序所诱导的输运性质和拓扑相变。在本文中,观察到了一种从(n = 2)到(n = 0)的特征拓扑相变,这与整数量子霍尔效应中的平台 - 平台转变形成鲜明对比。这种相变的独特特征应归因于这种高陈绝缘体的最小两能带特征。我们通过研究许多不同几何结构的输运性质以及在存在磁场和强无序情况下陈数的演化来证明这一结果。

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