具有Al2O3钝化层的表面等离子体增强型基于纳米多孔GaN的绿色发光二极管。

Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer.

作者信息

Yu Zhi-Guo, Zhao Li-Xia, Wei Xue-Cheng, Sun Xue-Jiao, An Ping-Bo, Zhu Shi-Chao, Liu Lei, Tian Li-Xin, Zhang Feng, Lu Hong-Xi, Wang Jun-Xi, Zeng Yi-Ping, Li Jin-Min

出版信息

Opt Express. 2014 Oct 20;22 Suppl 6:A1596-603. doi: 10.1364/OE.22.0A1596.

DOI:10.1364/OE.22.0A1596

PMID:25607317

Abstract

A surface plasmon (SP)-enhanced nanoporous GaN-based green LED based on top-down processing technology has been successfully fabricated. This SP-enhanced LED consists of nanopores passing through the multiple quantum wells (MQWs) region, with Ag nanorod array filled in the nanopores for SP-MQWs coupling and thin Al(2)O(3) passivation layer for electrical protection. Compared with nanoporous LED without Ag nanorods, the electroluminescence (EL) peak intensity for the SP-enhanced LED was greatly enhanced by 380% and 220% at an injection current density of 1 and 20A/cm(2), respectively. Our results show that the increased EL intensity is mainly attributed to the improved internal quantum efficiency of LED due to the SP coupling between Ag nanorods and MQWs.

摘要

基于自上而下加工技术成功制备了一种表面等离子体（SP）增强的基于纳米多孔氮化镓的绿色发光二极管。这种SP增强型发光二极管由穿过多量子阱（MQW）区域的纳米孔、填充在纳米孔中用于SP-MQW耦合的银纳米棒阵列以及用于电气保护的薄氧化铝钝化层组成。与没有银纳米棒的纳米多孔发光二极管相比，在注入电流密度为1和20A/cm²时，SP增强型发光二极管的电致发光（EL）峰值强度分别大幅提高了380%和220%。我们的结果表明，EL强度的增加主要归因于银纳米棒与MQW之间的SP耦合提高了发光二极管的内量子效率。