Jang Lee-Woon, Ju Jin-Woo, Jeon Dae-Woo, Park Jae-Woo, Polyakov A Y, Lee Seung-Jae, Baek Jong-Hyeob, Lee Song-Mei, Cho Yong-Hoon, Lee In-Hwan
School of Advanced Materials Engineering and Research Center of Advanced Materials Development and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea.
Opt Express. 2012 Mar 12;20(6):6036-41. doi: 10.1364/OE.20.006036.
2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.
在蓝色多量子阱（MQW）氮化镓/铟镓氮发光二极管（LED）中，通过在有源MQW区域下方的n型氮化镓薄膜以及LED的厚p型氮化镓接触层中引入嵌入银纳米颗粒（NP）的纳米针结构，观察到室温光致发光（PL）强度增加了2.7倍，电致发光（EL）强度增加了3.2倍。纳米针结构是通过光电化学蚀刻产生的。同时，观察到室温下的衰减时间从对照样品中的2.2纳秒可测量地降低到PL中的1.6纳秒。这些结果可以通过氮化镓/铟镓氮多量子阱中的复合与银纳米颗粒相关的局域表面等离子体的强耦合来解释。
