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二维矿物 [Pb2BiS3][AuTe2]:单层中具有高迁移率的电荷载流子。

Two-dimensional mineral [Pb2BiS3][AuTe2]: high-mobility charge carriers in single-atom-thick layers.

机构信息

†Department of Chemistry, ‡Department of Physics and Astronomy, and §Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.

出版信息

J Am Chem Soc. 2015 Feb 18;137(6):2311-7. doi: 10.1021/ja5111688. Epub 2015 Feb 5.

Abstract

Two-dimensional (2D) electronic systems are of wide interest due to their richness in chemical and physical phenomena and potential for technological applications. Here we report that [Pb2BiS3][AuTe2], known as the naturally occurring mineral buckhornite, hosts 2D carriers in single-atom-thick layers. The structure is composed of stacking layers of weakly coupled [Pb2BiS3] and [AuTe2] sheets. The insulating [Pb2BiS3] sheet inhibits interlayer charge hopping and confines the carriers in the basal plane of the single-atom-thick [AuTe2] layer. Magneto-transport measurements on synthesized samples and theoretical calculations show that [Pb2BiS3][AuTe2] is a multiband semimetal with a compensated density of electrons and holes, which exhibits a high hole carrier mobility of ∼1360 cm(2)/(V s). This material possesses an extremely large anisotropy, Γ = ρ(c)/ρ(ab) ≈ 10(4), comparable to those of the benchmark 2D materials graphite and Bi2Sr2CaCu2O(6+δ). The electronic structure features linear band dispersion at the Fermi level and ultrahigh Fermi velocities of 10(6) m/s, which are virtually identical to those of graphene. The weak interlayer coupling gives rise to the highly cleavable property of the single crystal specimens. Our results provide a novel candidate for a monolayer platform to investigate emerging electronic properties.

摘要

二维(2D)电子系统因其丰富的化学和物理现象以及潜在的技术应用而受到广泛关注。在这里,我们报告了一种名为自然矿物 buckhornite 的 [Pb2BiS3][AuTe2] 中存在二维载流子的情况,其载流子位于单层原子厚度的层中。该结构由层叠的弱耦合 [Pb2BiS3] 和 [AuTe2] 片组成。绝缘的 [Pb2BiS3] 片抑制了层间电荷跃迁,并将载流子限制在单层原子厚度的 [AuTe2] 层的基面上。对合成样品的磁输运测量和理论计算表明,[Pb2BiS3][AuTe2] 是一种多带半导体,具有补偿的电子和空穴密度,其空穴载流子迁移率高达约 1360 cm(2)/(V s)。这种材料具有极高的各向异性,Γ = ρ(c)/ρ(ab) ≈ 10(4),与基准 2D 材料石墨和 Bi2Sr2CaCu2O(6+δ)相当。电子结构在费米能级处具有线性能带色散和超高的费米速度 10(6) m/s,几乎与石墨烯相同。弱的层间耦合导致单晶样品具有高度可劈裂的特性。我们的结果为研究新兴电子特性提供了一种新的单层平台候选材料。

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