Solar and Photovoltaic Engineering Research Center (SPERC), King Abdullah University of Science and Technology (KAUST), 23955-6900 Thuwal, Saudi Arabia.
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada.
Science. 2015 Jan 30;347(6221):519-22. doi: 10.1126/science.aaa2725.
The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3 (MA = CH3NH3(+); X = Br(-) or I(-)) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics. We observed exceptionally low trap-state densities on the order of 10(9) to 10(10) per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.
有机卤化铅三卤化物 MAPbX3(MA = CH3NH3(+);X = Br(-) 或 I(-))钙钛矿的基本性质和最终性能极限仍然被多晶 MAPbX3 薄膜中的广泛无序所掩盖。我们报告了一种反溶剂蒸汽辅助结晶方法,使我们能够制造出体积超过 100 立方毫米的无裂缝 MAPbX3 单晶。这些大单晶使我们能够详细表征它们的光学和电荷输运特性。我们观察到 MAPbX3 单晶中的陷阱态密度极低,约为 10(9) 到 10(10) 每立方厘米(与最佳光伏质量的硅相当),载流子扩散长度超过 10 微米。这些结果通过密度泛函理论计算得到了验证。