Ketolainen T, Havu V, Puska M J
COMP, Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland.
J Chem Phys. 2015 Feb 7;142(5):054705. doi: 10.1063/1.4907205.
The conductivity of carbon nanotube thin films is mainly determined by carbon nanotube junctions, the resistance of which can be reduced by several different methods. We investigate electronic transport through carbon nanotube junctions in a four-terminal configuration, where two metallic single-wall carbon nanotubes are linked by a group 6 transition metal atom. The transport calculations are based on the Green's function method combined with the density-functional theory. The transition metal atom is found to enhance the transport through the junction near the Fermi level. However, the size of the nanotube affects the improvement in the conductivity. The enhancement is related to the hybridization of chromium and carbon atom orbitals, which is clearly reflected in the character of eigenstates near the Fermi level. The effects of chromium atoms and precursor molecules remaining adsorbed on the nanotubes outside the junctions are also examined.
碳纳米管薄膜的导电性主要由碳纳米管结决定,其电阻可通过几种不同方法降低。我们研究了通过四端配置的碳纳米管结的电子输运,其中两个金属单壁碳纳米管由一个第6族过渡金属原子连接。输运计算基于格林函数方法与密度泛函理论相结合。发现过渡金属原子增强了费米能级附近通过结的输运。然而,纳米管的尺寸会影响导电性的提高。这种增强与铬和碳原子轨道的杂化有关,这在费米能级附近的本征态特征中得到了明显体现。还研究了留在结外纳米管上吸附的铬原子和前驱体分子的影响。