Blackburn Jeffrey L, Barnes Teresa M, Beard Matthew C, Kim Yong-Hyun, Tenent Robert C, McDonald Timothy J, To Bobby, Coutts Timothy J, Heben Michael J
National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
ACS Nano. 2008 Jun;2(6):1266-74. doi: 10.1021/nn800200d.
We present a comprehensive study of the optical and electrical properties of transparent conductive films made from precisely tuned ratios of metallic and semiconducting single-wall carbon nanotubes. The conductivity and transparency of the SWNT films are controlled by an interplay between localized and delocalized carriers, as determined by the SWNT electronic structure, tube-tube junctions, and intentional and unintentional redox dopants. The results suggest that the main resistance in the SWNT thin films is the resistance associated with tube-tube junctions. Redox dopants are found to increase the delocalized carrier density and transmission probability through intertube junctions more effectively for semiconductor-enriched films than for metal-enriched films. As a result, redox-doped semiconductor-enriched films are more conductive than either intrinsic or redox-doped metal-enriched films.
我们对由精确调整比例的金属和半导体单壁碳纳米管制成的透明导电薄膜的光学和电学性质进行了全面研究。单壁碳纳米管薄膜的导电性和透明度由局域载流子和离域载流子之间的相互作用控制，这由单壁碳纳米管的电子结构、管-管结以及有意和无意的氧化还原掺杂剂决定。结果表明，单壁碳纳米管薄膜中的主要电阻是与管-管结相关的电阻。发现氧化还原掺杂剂对富含半导体的薄膜比富含金属的薄膜更有效地增加离域载流子密度和通过管间结的传输概率。因此，氧化还原掺杂的富含半导体的薄膜比本征或氧化还原掺杂的富含金属的薄膜导电性更强。
