Chandrakar P, Baghel R N, Bisen D P, Chandra B P
School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, Raipur, India.
Luminescence. 2015 Nov;30(7):1034-40. doi: 10.1002/bio.2855. Epub 2015 Feb 9.
A blue CaMgSi2O6:Eu(2+) phosphor was prepared by the solid-state reaction method and the phosphor characterized in terms of crystal structure, particle size, photoluminescence (PL), thermoluminescence (TL) and mechanoluminescence (ML) properties using X-ray diffraction (XRD), transmission electron microscopy (TEM), PL spectroscopy, TLD reader and ML impact technique. The XRD result shows that phosphor is formed in a single phase and has a monoclinic structure with the space group C2/c. Furthermore, the PL excitation spectra of Eu(2+) -doped CaMgSi2 O6 phosphor showed a strong band peak at 356 nm and the PL emission spectrum has a peak at 450 nm. The depths and frequency factors of trap centers were calculated using the TL glow curve by deconvolution method in which the trap depths were found to be 0.48 and 0.61 eV. The formation of CaMgSi2O6:Eu(2+) phosphor was confirmed by Fourier transform infrared spectroscopy. The ML intensity increased linearly with the impact velocity of the piston used to deform the phosphor. It was shown that the local piezoelectricity-induced electron bombardment model is responsible for the ML emission. Finally, the optical properties of CaMgSi2O6:Eu(2+) phosphors are discussed.
采用固相反应法制备了蓝色CaMgSi₂O₆:Eu²⁺荧光粉，并利用X射线衍射（XRD）、透射电子显微镜（TEM）、光致发光（PL）光谱、热释光（TLD）阅读器和机械发光（ML）冲击技术对该荧光粉的晶体结构、粒径、光致发光（PL）、热释光（TL）和机械发光（ML）性能进行了表征。XRD结果表明，荧光粉形成单相，具有单斜结构，空间群为C2/c。此外，Eu²⁺掺杂CaMgSi₂O₆荧光粉的PL激发光谱在356nm处有一个强带峰，PL发射光谱在450nm处有一个峰。利用热释光发光曲线通过去卷积方法计算了陷阱中心的深度和频率因子，发现陷阱深度分别为0.48和0.61eV。通过傅里叶变换红外光谱证实了CaMgSi₂O₆:Eu²⁺荧光粉的形成。ML强度随用于使荧光粉变形的活塞冲击速度线性增加。结果表明，局部压电诱导电子轰击模型是ML发射的原因。最后，讨论了CaMgSi₂O₆:Eu²⁺荧光粉的光学性能。
