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碳纳米管在Si(001)阶梯表面上的直径选择性排列。

Diameter-selective alignment of carbon nanotubes on Si(001) stepped surfaces.

作者信息

Enkhtaivan Batnyam, Yoshimura Masahide, Iwata Jun-Ichi, Oshiyama Atsushi

机构信息

Department of Applied Physics, The University of Tokyo, Hongo, Tokyo 113-8656, Japan.

出版信息

J Chem Phys. 2014 Jan 28;140(4):044713. doi: 10.1063/1.4862830.

Abstract

We report total-energy electronic-structure calculations based on the density-functional theory that provide stable adsorption sites, structural characteristics, and energy bands of carbon nanotubes (CNTs) adsorbed on the Si(001) stepped surfaces. We choose (5,5), (9,9), and (13,13) armchair CNTs with the diameters of 6.8 Å, 12.2 Å, and 17.6 Å, respectively, as representatives of CNTs and explore all the possible adsorption sites either on the terrace or at step edges. We find that the (9,9) CNT is most favorably adsorbed at the edge of the double-layer step DB along the ⟨110⟩ direction, whereas the (5,5) and (13,13) CNTs favor the terrace site where the CNTs are perpendicular to the Si dimer rows. This finding is indicative of the diameter-selective self-organized alignment of CNTs by exploiting the Si surface steps along the particular direction. We also find that the electronic structure of each CNT is modified upon adsorption depending on the adsorption site and the diameter of the CNTs. In particular, the (9,9) CNT at the most stable step edge site becomes semiconducting and the resultant valence and conduction bands exhibit nearly linear dispersion with the effective mass of 0.085 m0 (m0: bare electron mass), preserving the characteristics of the Dirac electrons. We also find that the flat bands appear near the Fermi level (EF) when the (13,13) CNT is adsorbed at the metastable DB step edge, inferring that spin polarization is possible for the CNT on the Si(001) stepped surface.

摘要

我们报告了基于密度泛函理论的总能带电子结构计算,该计算提供了吸附在Si(001)阶梯表面上的碳纳米管(CNT)的稳定吸附位点、结构特征和能带。我们分别选择直径为6.8 Å、12.2 Å和17.6 Å的(5,5)、(9,9)和(13,13)扶手椅型碳纳米管作为碳纳米管的代表,并探索了台地或台阶边缘上所有可能的吸附位点。我们发现,(9,9)碳纳米管最有利地吸附在双层台阶DB沿〈110〉方向的边缘,而(5,5)和(13,13)碳纳米管则倾向于碳纳米管垂直于Si二聚体行的台地位点。这一发现表明,通过利用沿特定方向的Si表面台阶,可以实现碳纳米管的直径选择性自组织排列。我们还发现,每个碳纳米管的电子结构在吸附后会根据吸附位点和碳纳米管的直径而发生改变。特别是,处于最稳定台阶边缘位点的(9,9)碳纳米管变为半导体,所得的价带和导带表现出近线性色散,有效质量为0.085 m0(m0:裸电子质量),保留了狄拉克电子的特性。我们还发现,当(13,13)碳纳米管吸附在亚稳DB台阶边缘时,在费米能级(EF)附近出现平带,这意味着Si(001)阶梯表面上碳纳米管可能存在自旋极化。

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