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在 GaAs 量子阱中测量零点光声子的电场,支持零温寿命展宽的 Urbach 定则。

Measurements of the electric field of zero-point optical phonons in GaAs quantum wells support the Urbach rule for zero-temperature lifetime broadening.

机构信息

Indian Institute of Science Education and Research Kolkata, Mohanpur Campus, Nadia 741246, West Bengal, India.

Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédédrale de Lausanne, CH-1015 Lausanne, Switzerland.

出版信息

Phys Rev Lett. 2015 Jan 30;114(4):047402. doi: 10.1103/PhysRevLett.114.047402. Epub 2015 Jan 28.

Abstract

We study a specific type of lifetime broadening resulting in the well-known exponential "Urbach tail" density of states within the energy gap of an insulator. After establishing the frequency and temperature dependence of the Urbach edge in GaAs quantum wells, we show that the broadening due to the zero-point optical phonons is the fundamental limit to the Urbach slope in high-quality samples. In rough analogy with Welton's heuristic interpretation of the Lamb shift, the zero-temperature contribution to the Urbach slope can be thought of as arising from the electric field of the zero-point longitudinal-optical phonons. The value of this electric field is experimentally measured to be 3  kV cm-1, in excellent agreement with the theoretical estimate.

摘要

我们研究了一种特定类型的寿命展宽,这种展宽导致了在绝缘体的能隙内出现众所周知的指数“Urbach 尾部”态密度。在确定了 GaAs 量子阱中 Urbach 边的频率和温度依赖性之后,我们表明,由于零点光学声子引起的展宽是高质量样品中 Urbach 斜率的基本限制。大致类似于 Welton 对 Lamb 位移的启发式解释,Urbach 斜率的零温贡献可以被认为是由零点纵光学声子的电场引起的。实验测量得到这个电场的值为 3 kV/cm-1,与理论估计非常吻合。

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