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单晶铋纳米线中与直径相关的热电品质因数

Diameter-dependent thermoelectric figure of merit in single-crystalline Bi nanowires.

作者信息

Kim Jeongmin, Lee Seunghyun, Brovman Yuri M, Kim Philip, Lee Wooyoung

机构信息

Department of Materials Science and Engineering Yonsei University, 134 Shinchon, Seoul 120-749, Korea.

出版信息

Nanoscale. 2015 Mar 21;7(11):5053-9. doi: 10.1039/c4nr06412g.

Abstract

The diameter-dependent thermoelectric properties of individual single-crystalline Bi nanowires grown by the on-film formation of nanowires method have been investigated. The electrical resistivity, Seebeck coefficient, and thermal conductivity were measured as functions of the nanowire diameter using an individual nanowire device. The thermoelectric figure of merit (ZT) calculated from the measured thermoelectric properties shows an increase from the bulk value to a maximum value of 0.28 at 109 nm-diameter, followed by a decrease upon further decreasing the diameter. This non-monotonic diameter dependence of ZT in Bi nanowires reveals simultaneous positive and negative contributions to the thermoelectric efficiency, driven by the change in intrinsic properties, which originates from the diameter-dependent classical and quantum size effects.

摘要

通过纳米线薄膜形成法生长的单个单晶铋纳米线的直径依赖性热电性质已得到研究。使用单个纳米线器件,测量了电阻率、塞贝克系数和热导率随纳米线直径的变化。根据测量的热电性质计算出的热电优值(ZT)显示,从体材料值增加到直径为109 nm时的最大值0.28,随后在进一步减小直径时下降。铋纳米线中ZT的这种非单调直径依赖性揭示了由本征性质变化驱动的对热电效率的同时正负贡献,这种本征性质变化源于直径依赖性的经典和量子尺寸效应。

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