Wu Chunsheng, Bronder Thomas, Poghossian Arshak, Werner Carl Frederik, Schöning Michael J
Institute of Nano- and Biotechnologies, FH Aachen, Campus Jülich, 52428 Jülich, Germany.
Nanoscale. 2015 Apr 14;7(14):6143-50. doi: 10.1039/c4nr07225a.
A multi-spot (16 spots) light-addressable potentiometric sensor (MLAPS) consisting of an Al-p-Si-SiO2 structure modified with a weak polyelectrolyte layer of PAH (poly(allylamine hydrochloride)) was applied for the label-free electrical detection of DNA (deoxyribonucleic acid) immobilization and hybridization by the intrinsic molecular charge for the first time. To achieve a preferentially flat orientation of DNA strands and thus, to reduce the distance between the DNA charge and MLAPS surface, the negatively charged probe single-stranded DNAs (ssDNA) were electrostatically adsorbed onto the positively charged PAH layer using a simple layer-by-layer (LbL) technique. In this way, more DNA charge can be positioned within the Debye length, yielding a higher sensor signal. The surface potential changes in each spot induced due to the surface modification steps (PAH adsorption, probe ssDNA immobilization, hybridization with complementary target DNA (cDNA), non-specific adsorption of mismatched ssDNA) were determined from the shifts of photocurrent-voltage curves along the voltage axis. A high sensor signal of 83 mV was registered after immobilization of probe ssDNA onto the PAH layer. The hybridization signal increases from 5 mV to 32 mV with increasing the concentration of cDNA from 0.1 nM to 5 μM. In contrast, a small signal of 5 mV was recorded in the case of non-specific adsorption of fully mismatched ssDNA (5 μM). The obtained results demonstrate the potential of the MLAPS in combination with the simple and rapid LbL immobilization technique as a promising platform for the future development of multi-spot light-addressable label-free DNA chips with direct electrical readout.
首次应用一种由Al-p-Si-SiO₂结构组成、经聚烯丙胺盐酸盐(PAH)弱聚电解质层修饰的多点(16个点)光寻址电位传感器(MLAPS),通过固有分子电荷对DNA(脱氧核糖核酸)固定和杂交进行无标记电学检测。为了使DNA链优先呈平面取向,从而减小DNA电荷与MLAPS表面之间的距离,使用简单的逐层(LbL)技术将带负电荷的探针单链DNA(ssDNA)静电吸附到带正电荷的PAH层上。通过这种方式,更多的DNA电荷可以定位在德拜长度内,从而产生更高的传感器信号。由光电流 - 电压曲线沿电压轴的偏移确定因表面修饰步骤(PAH吸附、探针ssDNA固定、与互补靶DNA(cDNA)杂交、错配ssDNA的非特异性吸附)在每个点引起的表面电位变化。将探针ssDNA固定到PAH层后,记录到高达83 mV的高传感器信号。随着cDNA浓度从0.1 nM增加到5 μM,杂交信号从5 mV增加到32 mV。相比之下,在完全错配的ssDNA(5 μM)非特异性吸附的情况下,记录到5 mV的小信号。所得结果表明,MLAPS与简单快速的LbL固定技术相结合,作为具有直接电学读出功能的多点光寻址无标记DNA芯片未来发展的一个有前景的平台具有潜力。