Wilkens H, Spiess W, Zoellner M H, Niu G, Schroeder T, Wollschläger J
Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, D-49069 Osnabrück, Germany.
Phys Chem Chem Phys. 2015 Apr 21;17(15):9991-6. doi: 10.1039/c5cp01105a.
In this work the structural and morphological changes of Ce1-xPrxO2-δ (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition annealing temperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formation via a polycrystalline intermediate state is observed.
在本工作中，通过低能电子衍射结合斑点轮廓分析，研究了在Si(111)上生长的Ce1-xPrxO2-δ（x = 0.20、0.35和0.75）薄膜在沉积后退火过程中的结构和形态变化。氧化膜表面呈现出由单原子台阶分隔的大平台组成的镶嵌结构。结果表明，Ce/Pr比和沉积后退火温度可用于调节晶粒的镶嵌扩展、平台尺寸和台阶高度。形态变化伴随着从萤石型晶格到方铁锰矿结构的相变。此外，在较高的沉积后退火温度下，观察到通过多晶中间态形成硅酸盐。
