Lin Zuohong, Li Chao, Kang Lei, Lin Zheshuai, Yao Jiyong, Wu Yicheng
Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Dalton Trans. 2015 Apr 28;44(16):7404-10. doi: 10.1039/c5dt00186b.
A new sulfide, SnGa2GeS6, has been synthesized, which represents the first member in the quaternary Sn/M/M'/Q (M = Ga, In; M' = Si, Ge; Q = S, Se, Te) system. It adopts a new structure type in the non-centrosymmetric space group Fdd2. In the structure, Sn(2+) is coordinated to a distorted square-pyramid of five S atoms, demonstrating the stereochemical activity of the lone electron pair, while the Ge atom and Ga atom are both tetrahedrally coordinated to four S atoms. The SnS5 square-pyramids and the MS4 (M = Ga, Ge) tetrahedra are connected to each other via corner and edge-sharing to generate a three-dimensional framework. The compound exhibits a powder second harmonic generation signal at 2 μm whose strength is about one-fourth that of the benchmark material AgGaS2, which may be explained in view of the macroscopic arrangement of the SnS5 square-pyramids and the MS4 tetrahedra. Moreover, based on UV-vis-NIR spectroscopy measurements and the electronic structure calculations, SnGa2GeS6 has two optical transitions at about 1.12 eV and 2.04 eV respectively.
一种新的硫化物SnGa2GeS6已被合成出来,它是四元体系Sn/M/M'/Q(M = Ga、In;M' = Si、Ge;Q = S、Se、Te)中的首个成员。它在非中心对称空间群Fdd2中采用了一种新的结构类型。在该结构中,Sn(2+)与由五个S原子构成的扭曲四方锥配位,显示出孤电子对的立体化学活性,而Ge原子和Ga原子均与四个S原子呈四面体配位。SnS5四方锥和MS4(M = Ga、Ge)四面体通过共用顶角和棱相互连接,形成一个三维骨架。该化合物在2μm处呈现出粉末二次谐波产生信号,其强度约为基准材料AgGaS2的四分之一,这可以从SnS5四方锥和MS4四面体的宏观排列角度来解释。此外,基于紫外-可见-近红外光谱测量和电子结构计算,SnGa2GeS6分别在约1.12 eV和2.04 eV处有两个光学跃迁。