Hou Lizhen, Wang Shiliang, Huang Han
State Key Laboratory for Powder Metallurgy, School of Physics and Electronics, Central South University, Changsha, 410083, People's Republic of China. School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD 4072, Australia.
Nanotechnology. 2015 Apr 24;26(16):165702. doi: 10.1088/0957-4484/26/16/165702. Epub 2015 Mar 27.
A simple criterion was developed to assess the appropriateness of the currently available models that estimate the static friction force between nanowires and substrates using the 'most-bent-state' method. Our experimental testing of the static friction force between Al2O3 nanowires and Si substrate verified our theoretical analysis, as well as the establishment of the criterion. It was found that the models are valid only for the bent nanowires with the ratio of wire length over the minimum curvature radius [Formula: see text] no greater than 1. For the cases with [Formula: see text] greater than 1, the static friction force was overestimated as it neglected the effect of its tangential component.
开发了一种简单的标准，以评估当前可用的使用“最弯曲状态”方法估计纳米线与基板之间静摩擦力的模型的适用性。我们对Al2O3纳米线与Si基板之间静摩擦力的实验测试验证了我们的理论分析以及该标准的建立。结果发现，这些模型仅对长度与最小曲率半径之比[公式：见正文]不大于1的弯曲纳米线有效。对于[公式：见正文]大于1的情况，由于忽略了其切向分量的影响，静摩擦力被高估了。
