Dai Kai, Lu Luhua, Liang Changhao, Zhu Guangping, Liu Qinzhuang, Geng Lei, He Junqi
College of Physics and Electronic Information, Huaibei Normal University, Huaibei, 235000, P.R. China.
Dalton Trans. 2015 May 7;44(17):7903-10. doi: 10.1039/c5dt00475f.
It is important to reduce the recombination of electrons and holes and enhance charge transfer through fine controlled interfaces for advanced catalyst design. In this work, graphene oxide (GO) was composited with graphitic-C3N4 (g-C3N4) and BiOI forming GO/g-C3N4 and GO/BiOI heterostructural interfaces, respectively. GO, which has a work function between the conducting bands of g-C3N4 and BiOI, is used as a buffer material to enhance electron transfer from g-C3N4 to BiOI through the GO/g-C3N4 and GO/BiOI interfaces. The increased photocurrent and reduced photoluminescence indicate efficient reduction of electron and hole recombination under the successful heterostructure design. Accordingly, the introduction of GO as a charge transfer buffer material has largely enhanced the photocatalytic performance of the composite. Thus, introducing charge transfer buffer materials for photocatalytic performance enhancement has proved to be a new strategy for advanced photocatalyst design.
对于先进催化剂设计而言,通过精细控制界面来减少电子与空穴的复合并增强电荷转移至关重要。在这项工作中,氧化石墨烯(GO)分别与石墨相氮化碳(g-C3N4)和BiOI复合,形成了GO/g-C3N4和GO/BiOI异质结构界面。GO的功函数介于g-C3N4和BiOI的导带之间,用作缓冲材料,通过GO/g-C3N4和GO/BiOI界面增强从g-C3N4到BiOI的电子转移。光电流增加和光致发光减少表明在成功的异质结构设计下电子与空穴的复合得到有效减少。因此,引入GO作为电荷转移缓冲材料极大地提高了复合材料的光催化性能。由此证明,引入电荷转移缓冲材料以提高光催化性能是先进光催化剂设计的一种新策略。