Littmann L, Tenczer J, Fenyvesi T
Pacing Clin Electrophysiol. 1985 May;8(3 Pt 1):341-7. doi: 10.1111/j.1540-8159.1985.tb05768.x.
Electrophysiologic study was performed in a patient with tachycardia-dependent paroxysmal atrioventricular block. The site of block was within the His bundle. The effective refractory period of the His bundle was markedly prolonged and it was comparable to the critical atrial cycle length producing type II His bundle block. The most likely mechanism of paroxysmal atrioventricular block was repetitive concealed penetration of the blocking zone by nonconducted impulses that reached the proximal His bundle. Enhancing the blocking ratio at the atrioventricular nodal level resulted in improvement of overall atrioventricular conduction.
对一名患有心动过速依赖性阵发性房室传导阻滞的患者进行了电生理研究。阻滞部位在希氏束内。希氏束的有效不应期明显延长，且与产生Ⅱ型希氏束阻滞的临界心房周期长度相当。阵发性房室传导阻滞最可能的机制是未传导的冲动反复隐匿性穿入阻滞区，这些冲动到达希氏束近端。提高房室结水平的阻滞率可改善整体房室传导。
