Zhang Y, Melnikov A, Mandelis A, Halliop B, Kherani N P, Zhu R
Center for Advanced Diffusion-Wave Technologies (CADIFT), Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, Ontario M5S 3G8, Canada.
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada.
Rev Sci Instrum. 2015 Mar;86(3):033901. doi: 10.1063/1.4913659.
A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.
一个包含有效界面载流子陷阱的理论一维双层线性光载流子辐射测量（PCR）模型，被用于评估由本征氢化非晶硅（i层）纳米层钝化的p型氢化非晶硅（a-Si:H）和n型晶体硅（c-Si）的传输参数。研究了几种晶体硅异质结结构，以考察i层厚度和a-Si:H层掺杂浓度的影响。将一系列具有本征薄层的异质结结构的实验数据与PCR理论进行拟合，以深入了解这些器件的传输特性。使用两个独立的计算最佳拟合程序，从测量可靠性（唯一性）和精度方面研究了定量多参数结果。证明了两个可限制非晶硅薄膜太阳能电池性能的关键参数，即a-Si:H层的掺杂浓度和i层厚度，对整个结构的传输特性有显著影响。结果表明，PCR可应用于a-Si:H/c-Si异质结太阳能电池的无损表征，从而对关键参数进行可靠测量。
