Wang Shufen, Wang Jingjing, Cheng Weiwei, Yang Xiaowei, Zhang Zaiyong, Xu Yan, Liu Hongke, Wu Yong, Fang Min
Department of Chemistry, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China.
Dalton Trans. 2015 May 7;44(17):8049-61. doi: 10.1039/c5dt00421g.
A new (4,8)-connected Zr-MOF porous zirconium metal-organic framework (Zr-MOF) with flu topology, Zr6(μ3-O)4(μ3-OH)4(TCPS)2(H2O)4(OH)4 (, TCPS = tetrakis(4-carboxyphenyl) silane) with a BET specific area of 1402 m(2) g(-1) has been constructed and fully characterized. is stable in air and acid media but unstable in water and basic media, and thermally stable up to 200 °C. The new MOF is a wide band gap semiconductor with Eg = 3.95 eV. The excitation of at 260 nm gives a ligand-based emission peak at 435 nm. After solvent exchange processes and activation at 200 °C, this MOF exhibits high storage capacities for H2, CH4 and CO2. We summarized the hydrothermal stability data of Zr-MOFs, calculated the NBO (natural bond orbital) charges of the coordinating oxygen atoms of the corresponding carboxylate ligands and analyzed the influencing factors. Besides the known reasons of hydrothermal stabilities of Zr-MOFs, we demonstrated that NBO charges of coordinating atoms of the ligands can be used to explain the hydrothermal stabilities of Zr-MOFs.
一种具有flu拓扑结构的新型(4,8)连接的锆基金属有机框架(Zr-MOF),即Zr6(μ3-O)4(μ3-OH)4(TCPS)2(H2O)4(OH)4(TCPS = 四(4-羧基苯基)硅烷),其BET比表面积为1402 m² g⁻¹,已被构建并全面表征。该材料在空气和酸性介质中稳定,但在水和碱性介质中不稳定,热稳定性高达200°C。这种新型MOF是一种宽带隙半导体,Eg = 3.95 eV。在260 nm处激发会在435 nm处产生基于配体的发射峰。经过溶剂交换过程并在200°C下活化后,这种MOF对H2、CH4和CO2表现出高存储容量。我们总结了Zr-MOFs的水热稳定性数据,计算了相应羧酸酯配体配位氧原子的自然键轨道(NBO)电荷,并分析了影响因素。除了Zr-MOFs水热稳定性的已知原因外,我们证明配体配位原子的NBO电荷可用于解释Zr-MOFs的水热稳定性。