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基于谐振腔内缺陷态吸收型光电探测器的硅微环谐振器的有源谐振波长稳定

Active resonance wavelength stabilization for silicon microring resonators with an in-resonator defect-state-absorption-based photodetector.

作者信息

Li Yu, Poon Andrew W

出版信息

Opt Express. 2015 Jan 12;23(1):360-72. doi: 10.1364/OE.23.000360.

DOI:10.1364/OE.23.000360
PMID:25835682
Abstract

We propose and demonstrate active resonance wavelength stabilization for silicon microring resonators with an in-resonator defect-state-absorption (DSA)-based photodetector (PD) for optical interconnects. We integrate an electro-optic (EO) tuner and a thermo-optic (TO) tuner on the microring, which are both feedback-controlled following a photocurrent threshold-detection method. Our BF(2)-ion-implanted DSA-based PIN PD exhibits a cavity-enhanced sub-bandgap responsivity at 1550 nm of 3.3 mA/W upon -2 V, which is 550-fold higher than that exhibited by an unimplanted PIN diode integrated on the same microring. Our experiment reveals active stabilization of the resonance wavelength within a tolerance of 0.07 nm upon a step increment of the stage temperature by 7 °C. Upon temperature modulations between 23 °C and 32 °C and between 18 °C and 23 °C, the actively stabilized resonance exhibits a transmission power fluctuation within 2 dB. We observe open eye diagrams at a data transmission rate of up to 30 Gb/s under the temperature modulations.

摘要

我们提出并展示了用于硅微环谐振器的有源谐振波长稳定技术,该谐振器带有用于光互连的基于谐振器缺陷态吸收(DSA)的光电探测器(PD)。我们在微环上集成了一个电光(EO)调谐器和一个热光(TO)调谐器,二者均采用光电流阈值检测方法进行反馈控制。我们基于BF(2)离子注入DSA的PIN PD在-2V电压下,在1550nm处表现出3.3mA/W的腔增强亚带隙响应率,这比集成在同一微环上的未注入PIN二极管的响应率高550倍。我们的实验表明,当平台温度逐步升高7°C时,谐振波长可在0.07nm的容差范围内实现有源稳定。在23°C至32°C以及18°C至23°C之间进行温度调制时,有源稳定的谐振表现出2dB以内的传输功率波动。我们在温度调制下观察到高达30Gb/s的数据传输速率下的张开眼图。

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