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复杂增益介质的稳态从头算激光理论

Steady-state ab initio laser theory for complex gain media.

作者信息

Cerjan Alexander, Chong Y D, Stone A Douglas

出版信息

Opt Express. 2015 Mar 9;23(5):6455-77. doi: 10.1364/OE.23.006455.

DOI:10.1364/OE.23.006455
PMID:25836865
Abstract

We derive and test a generalization of the steady-state ab initio laser theory (SALT) to treat complex gain media. The generalized theory (C-SALT) is able to treat atomic and molecular gain media with diffusion and multiple lasing transitions, and semiconductor gain media in the free carrier approximation including fully the effect of Pauli blocking. The key assumption of the theory is stationarity of the level populations, which leads to coupled self-consistent equations for the populations and the lasing modes that fully include the effects of openness and non-linear spatial hole-burning. These equations can be solved efficiently for the steady-state lasing properties by a similar iteration procedure as in SALT, where a static gain medium with a single transition is assumed. The theory is tested by comparison to much less efficient finite difference time domain (FDTD) methods and excellent agreement is found. Using C-SALT to analyze the effects of varying gain diffusion constant we demonstrate a cross-over between the regime of strong spatial hole burning with multimode lasing to a regime of negligible spatial hole burning, leading to gain-clamping, and single mode lasing. The effect of spatially inhomogeneous pumping combined with diffusion is also studied and a relevant length scale for spatial inhomogeneity to persist under these conditions is determined. For the semiconductor gain model, we demonstrate the frequency shift due to Pauli blocking as the pumping strength changes.

摘要

我们推导并测试了稳态从头算激光理论(SALT)的一种推广形式,以处理复杂增益介质。广义理论(C-SALT)能够处理具有扩散和多个激光跃迁的原子和分子增益介质,以及自由载流子近似下的半导体增益介质,其中充分考虑了泡利阻塞效应。该理论的关键假设是能级布居的平稳性,这导致了关于布居和激光模式的耦合自洽方程,这些方程充分包含了开放和非线性空间烧孔的影响。通过与SALT中类似的迭代过程,可以有效地求解这些方程以得到稳态激光特性,其中假设为具有单一跃迁的静态增益介质。通过与效率低得多的时域有限差分(FDTD)方法进行比较来测试该理论,结果发现两者吻合良好。使用C-SALT分析增益扩散常数变化的影响时,我们展示了从具有多模激光的强空间烧孔 regime 到空间烧孔可忽略不计、导致增益钳位和单模激光的 regime 的转变。还研究了空间不均匀泵浦与扩散相结合的影响,并确定了在这些条件下空间不均匀性持续存在的相关长度尺度。对于半导体增益模型,我们展示了随着泵浦强度变化由于泡利阻塞引起的频移。

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