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使用剪切模式薄膜体声波谐振器(FBAR)器件检测人免疫球蛋白E(IgE)的生物传感器。

Biosensor for human IgE detection using shear-mode FBAR devices.

作者信息

Chen Ying-Chung, Shih Wei-Che, Chang Wei-Tsai, Yang Chun-Hung, Kao Kuo-Sheng, Cheng Chien-Chuan

机构信息

Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, 80424 Taiwan.

Department of Computer and Communication, Shu-Te University, Kaohsiung, 82445 Taiwan.

出版信息

Nanoscale Res Lett. 2015 Feb 18;10:69. doi: 10.1186/s11671-015-0736-3. eCollection 2015.

DOI:10.1186/s11671-015-0736-3
PMID:25852365
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4385051/
Abstract

Film bulk acoustic resonators (FBARs) have been evaluated for use as biosensors because of their high sensitivity and small size. This study fabricated a novel human IgE biosensor using shear-mode FBAR devices with c-axis 23°-tilted AlN thin films. Off-axis radio frequency (RF) magnetron sputtering method was used for deposition of c-axis 23°-tilted AlN thin films. The deposition parameters were adopted as working pressure of 5 mTorr, substrate temperature of 300°C, sputtering power of 250 W, and 50 mm distance between off-axis and on-axis. The characteristics of the AlN thin films were investigated by X-ray diffraction and scanning electron microscopy. The frequency response was measured with an HP8720 network analyzer with a CASCADE probe station. The X-ray diffraction revealed (002) preferred wurtzite structure, and the cross-sectional image showed columnar structure with 23°-tilted AlN thin films. In the biosensor, an Au/Cr layer in the FBAR backside cavity was used as the detection layer and the Au surface was modified using self-assembly monolayers (SAMs) method. Then, the antigen and antibody were coated on biosensor through their high specificity property. Finally, the shear-mode FBAR device with k t (2) of 3.18% was obtained, and the average sensitivity for human IgE detection of about 1.425 × 10(5) cm(2)/g was achieved.

摘要

薄膜体声波谐振器(FBAR)因其高灵敏度和小尺寸而被评估用作生物传感器。本研究使用具有c轴23°倾斜AlN薄膜的剪切模式FBAR器件制造了一种新型的人IgE生物传感器。采用离轴射频(RF)磁控溅射法沉积c轴23°倾斜的AlN薄膜。沉积参数采用工作压力5 mTorr、衬底温度300°C、溅射功率250 W以及离轴与轴上距离50 mm。通过X射线衍射和扫描电子显微镜研究了AlN薄膜的特性。使用带有CASCADE探针台的HP8720网络分析仪测量频率响应。X射线衍射显示出(002)择优纤锌矿结构,横截面图像显示出具有23°倾斜AlN薄膜的柱状结构。在生物传感器中,FBAR背面腔中的Au/Cr层用作检测层,并且使用自组装单分子层(SAMs)方法对Au表面进行修饰。然后,通过抗原和抗体的高特异性将它们涂覆在生物传感器上。最后,获得了kt(2)为3.18%的剪切模式FBAR器件,并且实现了对人IgE检测的平均灵敏度约为1.425×10(5)cm(2)/g。

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