Shei Shih-Chang, Chiang Wen-Jui, Chang Shoou-Jinn
Department of Electrical Engineering, National University of Tainan, Tainan, 70005 Taiwan.
Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 70101 Taiwan.
Nanoscale Res Lett. 2015 Mar 12;10:122. doi: 10.1186/s11671-015-0789-3. eCollection 2015.
This paper presents a facile solvothermal method of synthesizing copper indium sulfide (CuInS2) quantum dots (QDs) via a non-coordinated system using polyetheramine as a solvent. The structural and optical properties of the resulting CuInS2 QDs were investigated using composition analysis, absorption spectroscopy, and emission spectroscopy. We employed molar ratios of I, III, and VI group elements to control the structure of CuInS2 QDs. An excess of group VI elements facilitated precipitation, whereas an excess of group I elements resulted in CuInS2 QDs with high photoluminescence quantum yield. The emission wavelength and photoluminescence quantum yield could also be modulated by controlling the composition ratio of Cu and In in the injection stock solution. An increase in the portion of S shifted the emission wavelength of the QDs to a shorter wavelength and increased the photoluminescence quantum yield. Our results demonstrate that the band gap of the CuInS2 QDs is tunable with size as well as the composition of the reactant. The photoluminescence quantum yield of the CuInS2 QDs ranged between 0.7% and 8.8% at 250°C. We also determined some important physical parameters such as the band gaps and energy levels of this system, which are crucial for the application of CuInS2 nanocrystals.
本文介绍了一种简便的溶剂热法,通过以聚醚胺为溶剂的非配位体系合成硫化铜铟(CuInS2)量子点(QDs)。使用成分分析、吸收光谱和发射光谱对所得CuInS2量子点的结构和光学性质进行了研究。我们采用I、III和VI族元素的摩尔比来控制CuInS2量子点的结构。过量的VI族元素促进沉淀,而过量的I族元素导致具有高光致发光量子产率的CuInS2量子点。发射波长和光致发光量子产率也可以通过控制注入储备溶液中Cu和In的组成比来调节。S比例的增加使量子点的发射波长向更短波长移动,并提高了光致发光量子产率。我们的结果表明,CuInS2量子点的带隙可随尺寸以及反应物的组成而调节。在250°C下,CuInS2量子点的光致发光量子产率在0.7%至8.8%之间。我们还确定了该体系的一些重要物理参数,如带隙和能级,这对于CuInS2纳米晶体的应用至关重要。