Institut für Physikalische Chemie, Universität Hamburg, Bundesstrasse 45, 20146 Hamburg, Germany.
Chemphyschem. 2001 May 18;2(5):331-4. doi: 10.1002/1439-7641(20010518)2:5<331::AID-CPHC331>3.0.CO;2-0.
The wide-bandgap semiconducting material, zinc sulfide, has been coated on indium phosphide nanoclusters to a 1-2-Å thickness. The resulting InP-ZnS core-shell particle (as shown in the TEM image; scale 1 cm=5 nm) exhibits bright luminescence at room temperature with quantum efficiencies as high as 23 %.
宽带隙半导体材料硫化锌已被包覆在磷化铟纳米团簇上，厚度为 1-2 Å。所得的 InP-ZnS 核壳粒子（如 TEM 图像所示；比例尺 1 cm=5 nm）在室温下具有高达 23%的量子效率，表现出明亮的发光。
