Xenogiannopoulou E, Tsipas P, Aretouli K E, Tsoutsou D, Giamini S A, Bazioti C, Dimitrakopulos G P, Komninou Ph, Brems S, Huyghebaert C, Radu I P, Dimoulas A
Institute of Nanoscience and Nanotechnology, NCSR DEMOKRITOS, GR-15310, Athens, Greece.
Nanoscale. 2015 May 7;7(17):7896-905. doi: 10.1039/c4nr06874b.
Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The successful growth of high-quality MoSe2/Bi2Se3 multilayers on AlN shows promise for novel devices exploiting the non-trivial topological properties of Bi2Se3.
原子级薄的二维半导体为纳米电子器件提供了厚度缩放能力，并对光具有出色的响应，适用于低功耗通用应用。利用小的剥离薄片，已经实现了先进的器件和集成电路，显示出对纳米电子学产生影响的巨大潜力。在此，通过分子束外延在AlN(0001)/Si(111)上生长出高质量的单晶MoSe2，显示出扩大生长规模以用于低成本、大面积衬底进行大规模生产的潜力。MoSe2层与氮化铝(AlN)晶格外延对齐，表面和界面均匀、光滑，无反应或混合，且具有足够高的带隙偏移。获得了高质量的单层MoSe2，角分辨光电子能谱证明其具有直接带隙，并通过拉曼光谱和强烈的室温光致发光进一步证实。在AlN上成功生长高质量的MoSe2/Bi2Se3多层膜，为利用Bi2Se3非平凡拓扑性质的新型器件带来了希望。
