InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm.

The mid-infrared whispering-gallery-mode disk cavities with InAs0.85Sb0.15/InAs0.53P0.23Sb0.24 multiple quantum wells active medium on a GaSb substrate were fabricated. For this material system in the mid-infrared range, fabrication techniques were developed to form the disk cavity structure. The smooth sidewalls of the disk cavities were achieved by appropriate gas mixture flow ratio of BCl3/Ar in the inductively coupled plasma-reactive ion etching. In addition, selective wet etching technique was used to form the pedestal of the disk cavity using dilute hydrofluoric acid with good selectivity. For efficient confinement of the whispering gallery modes along the radial direction, the extent of the lateral etching was carefully controlled. The processed 30-μm-diameter disk cavities were optically pumped, and the whispering gallery modes with wavelengths around 4.1 μm can be observed up to 90 K.