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利用分层组装的 ITO@Cu2S 纳米线阵列对电极提高 QDSSCs 的开路电压和填充因子。

Boosting the Open Circuit Voltage and Fill Factor of QDSSCs Using Hierarchically Assembled ITO@Cu2S Nanowire Array Counter Electrodes.

机构信息

†Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, 2 North First Street, Zhongguancun, Beijing 100190, China.

‡Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, Shanghai 200237, China.

出版信息

Nano Lett. 2015 May 13;15(5):3088-95. doi: 10.1021/acs.nanolett.5b00096. Epub 2015 May 4.

Abstract

The key challenges in enhancing the power conversion efficiency (PCE) of a quantum dot-sensitized solar cell (QDSSC) are efficiently achieving charge separation at the photoanode and improving the charge transfer, which is limited by the interface between the electrolyte and the counter electrode (CE). Here, hierarchically assembled ITO@Cu2S nanowire arrays with conductive single-crystalline ITO cores and Cu2S nanocrystal shells were designed as efficient QDSSCs CEs. These arrays not only provided an efficient three-dimensional charge transport network but also allowed for the effective deposition of more Cu2S nanocrystals as active sites to catalyze the electrolyte reaction. This design considerably reduced the sheet and charge transfer resistance of the CE, thus decreasing the series resistance and increasing the shunt resistance of the QDSSC. As a result, QDSSCs with this CE exhibited an unprecedentedly high Voc of 0.688 V, a fill factor of 58.39%, and a PCE of 6.12%, which is 21.2% higher than that of the conventional brass/Cu2S CE.

摘要

提高量子点敏化太阳能电池(QDSSC)的功率转换效率(PCE)的主要挑战是在光阳极有效实现电荷分离,并改善电荷转移,而这受到电解质与对电极(CE)之间界面的限制。在这里,设计了具有导电单晶 ITO 核和 Cu2S 纳米晶壳的分层组装的 ITO@Cu2S 纳米线阵列作为高效 QDSSC 的 CE。这些阵列不仅提供了有效的三维电荷传输网络,而且还允许有效沉积更多的 Cu2S 纳米晶作为活性位点来催化电解质反应。这种设计大大降低了 CE 的片电阻和电荷转移电阻,从而降低了 QDSSC 的串联电阻并提高了其分流电阻。因此,具有这种 CE 的 QDSSC 表现出前所未有的高 Voc(0.688 V)、填充因子(58.39%)和 PCE(6.12%),比传统的黄铜/Cu2S CE 高 21.2%。

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