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氧化铟纳米晶体固体中电子迁移率新观察到的温度和表面配体依赖性。

Newly observed temperature and surface ligand dependence of electron mobility in indium oxide nanocrystals solids.

作者信息

Pham Hien Thu, Jeong Hyun-Dam

机构信息

Department of Chemistry, Chonnam National University, Gwangju 500-757, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2015 Jun 3;7(21):11660-7. doi: 10.1021/acsami.5b02971. Epub 2015 May 20.

Abstract

We developed a new class of organic surface ligands; 2-aminopyridine (2AP), 4-aminobenzoic acid (4ABA), and benzoic acid (BA); for use in the solution ligand exchange of nanocrystals (NCs) in the presence of nitric acid (HNO3). Here, colloidal NCs synthesis is used for the first time. These short, air-stable, easy-to-model ligands bind to the surface of the indium oxide nanocrystal (In2O3 NC) and provide the electrostatic stabilization of NC semiconductor dispersions in N,N-dimethylformamide, allowing for a solution-based deposition of NCs into thin-film transitors (TFTs). The shorter organic ligands greatly facilitate electronic coupling between the NCs. For example, thin films made from 2AP-capped In2O3 NCs exhibited a high electron mobility of μ≈9.5 cm2/(V·s), an on-off current ratio of about >10(7), and a subthreshold swing of 2.34 V/decade. As the ligand length decreased, the electron mobility increased exponentially. Furthermore, we also report on the temperature-dependent behavior of the electron transport of In2O3 NCs films, in the case in which thin films were cured at 150 °C, as the 2AP, BA, and 4ABA ligand molecules were sustained on the NC. We demonstrated a hopping transport mechanism instead of a band-like transport, and the thermally activated carrier transport process governed the charge transport in our In2O3 NC thin-film solid.

摘要

我们开发了一类新型有机表面配体;2-氨基吡啶(2AP)、4-氨基苯甲酸(4ABA)和苯甲酸(BA);用于在硝酸(HNO₃)存在下的纳米晶体(NCs)溶液配体交换。在此,首次使用了胶体NCs合成方法。这些短的、空气稳定且易于建模的配体与氧化铟纳米晶体(In₂O₃ NC)表面结合,并在N,N-二甲基甲酰胺中为NC半导体分散体提供静电稳定作用,从而能够将NCs以溶液为基础沉积到薄膜晶体管(TFTs)中。较短的有机配体极大地促进了NCs之间的电子耦合。例如,由2AP封端的In₂O₃ NCs制成的薄膜表现出高电子迁移率μ≈9.5 cm²/(V·s)、开-关电流比约>10⁷以及亚阈值摆幅为2.34 V/十倍频程。随着配体长度减小,电子迁移率呈指数增加。此外,我们还报道了In₂O₃ NCs薄膜电子传输的温度依赖性行为,在薄膜于150°C固化的情况下,因为2AP、BA和4ABA配体分子保留在NC上。我们证明了一种跳跃传输机制而非带状传输机制,并且热激活载流子传输过程支配了我们In₂O₃ NC薄膜固体中的电荷传输。

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