Department of Chemistry and James Frank Institute, University of Chicago, Illinois 60637, USA.
J Am Chem Soc. 2013 Jan 30;135(4):1349-57. doi: 10.1021/ja308200f. Epub 2013 Jan 16.
In this work, we synthesized InP and InAs nanocrystals (NCs) capped with different inorganic ligands, including various molecular metal chalcogenide complexes (MCCs) and chalcogenide ions. We found that MCCs and chalcogenide ions can quantitatively displace organic ligands from the surface of III-V NCs and serve as the inorganic capping groups for III-V NC surfaces. These inorganic ligands stabilize colloidal solutions of InP and InAs NCs in polar solvents and greatly facilitate charge transport between individual NCs. Charge transport studies revealed high electron mobility in the films of MCC-capped InP and InAs NCs. For example, we found that bridging InAs NCs with Cu(7)S(4)(-) MCC ligands can lead to very high electron mobility exceeding 15 cm(2)/(V s). In addition, we observed unprecedented ambipolar (positive/negative) photoresponse of MCC-capped InAs NC solids that changed sign depending on the ligand chemistry, illumination wavelength, and doping of the NC solid. For example, the sign of photoconductance of InAs NCs capped with Cu(7)S(4)(-) or Sn(2)S(6)(4-) ions converted from positive at 0.80 and 0.95 eV to negative at 1.27 and 1.91 eV. We propose an explanation of this unusually complex photoconductivity of InAs NC solids.
在这项工作中,我们合成了用不同无机配体(包括各种分子金属硫属化物复合物(MCCs)和硫属化物离子)包覆的 InP 和 InAs 纳米晶体(NCs)。我们发现,MCCs 和硫属化物离子可以定量地从 III-V NC 表面取代有机配体,并作为 III-V NC 表面的无机封端基团。这些无机配体稳定了 InP 和 InAs NC 胶体在极性溶剂中的溶液,并极大地促进了单个 NC 之间的电荷传输。电荷传输研究表明,MCC 包覆的 InP 和 InAs NC 薄膜具有高电子迁移率。例如,我们发现用 Cu(7)S(4)(-) MCC 配体桥连 InAs NC 可以导致非常高的电子迁移率,超过 15 cm(2)/(V s)。此外,我们观察到 MCC 包覆的 InAs NC 固体具有前所未有的双极性(正/负)光响应,其响应取决于配体化学、照射波长和 NC 固体的掺杂。例如,用 Cu(7)S(4)(-)或 Sn(2)S(6)(4-)离子包覆的 InAs NCs 的光电导的符号在 0.80 和 0.95 eV 时从正变为 1.27 和 1.91 eV 时的负。我们提出了对 InAs NC 固体这种异常复杂光电导性的解释。