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纳米限域诱导垂直排列的聚(偏二氟乙烯-三氟乙烯)纳米管阵列中的晶体取向和大压电系数。

Nanoconfinement induced crystal orientation and large piezoelectric coefficient in vertically aligned P(VDF-TrFE) nanotube array.

作者信息

Liew Weng Heng, Mirshekarloo Meysam Sharifzadeh, Chen Shuting, Yao Kui, Tay Francis Eng Hock

机构信息

Institute of Materials Research and Engineering (IMRE), A* STAR (Agency for Science, Technology and Research) 3 Research Link, 117602 (Singapore).

Department of Mechanical Engineering National University of Singapore Kent Ridge, 119260 (Singapore).

出版信息

Sci Rep. 2015 May 12;5:9790. doi: 10.1038/srep09790.

DOI:10.1038/srep09790
PMID:25966301
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4434347/
Abstract

Vertically aligned piezoelectric P(VDF-TrFE) nanotube array comprising nanotubes embedded in anodized alumina membrane matrix without entanglement has been fabricated. It is found that the crystallographic polar axes of the P(VDF-TrFE) nanotubes are oriented along the nanotubes long axes. Such a desired crystal orientation is due to the kinetic selection mechanism for lamellae growth confined in the nanopores. The preferred crystal orientation in nanotubes leads to huge piezoelectric coefficients of the P(VDF-TrFE). The piezoelectric strain and voltage coefficients of P(VDF-TrFE) nanotube array are observed to be 1.97 and 3.40 times of those for conventional spin coated film. Such a significant performance enhancement is attributed to the well-controlled polarization orientation, the elimination of the substrate constraint, and the low dielectric constant of the nanotube array. The P(VDF-TrFE) nanotube array exhibiting the unique structure and outstanding piezoelectric performance is promising for wide applications, including various electrical devices and electromechanical sensors and transducers.

摘要

已经制备出垂直排列的压电聚偏氟乙烯-三氟乙烯(P(VDF-TrFE))纳米管阵列,该阵列中的纳米管嵌入阳极氧化铝膜基质中且无缠结。研究发现,P(VDF-TrFE)纳米管的晶体学极轴沿纳米管长轴方向排列。这种理想的晶体取向归因于纳米孔中片晶生长的动力学选择机制。纳米管中这种优选的晶体取向导致P(VDF-TrFE)具有巨大的压电系数。观察到P(VDF-TrFE)纳米管阵列的压电应变系数和电压系数分别是传统旋涂膜的1.97倍和3.40倍。如此显著的性能提升归因于良好控制的极化取向、消除了基底约束以及纳米管阵列的低介电常数。具有独特结构和出色压电性能的P(VDF-TrFE)纳米管阵列在包括各种电气设备以及机电传感器和换能器等广泛应用中具有广阔前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/2e62de5d823c/srep09790-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/504a73ebf406/srep09790-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/46a4c93b0363/srep09790-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/224f04e3db5c/srep09790-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/5945ce1f3188/srep09790-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/c1f8f4a25b88/srep09790-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/2e62de5d823c/srep09790-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/504a73ebf406/srep09790-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/46a4c93b0363/srep09790-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/224f04e3db5c/srep09790-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/5945ce1f3188/srep09790-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/c1f8f4a25b88/srep09790-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc6b/4434347/2e62de5d823c/srep09790-f6.jpg

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