Liang Wei, Ilchenko Vladimir S, Eliyahu Danny, Dale Elijah, Savchenkov Anatoliy A, Seidel David, Matsko Andrey B, Maleki Lute
Appl Opt. 2015 Apr 10;54(11):3353-9. doi: 10.1364/AO.54.003353.
We report on the development of a frequency modulatable 795 nm semiconductor laser based on self-injection locking to a high-quality-factor whispering-gallery-mode microresonator. The laser is characterized by residual amplitude modulation below -80 dB and frequency noise better than 300 Hz/Hz(1/2) at offset frequencies ranging from 100 Hz to 10 MHz. The frequency modulation speed and span of the laser exceed 1 MHz and 4 GHz, respectively. Locking of the laser to the Doppler-free saturated absorption resonance of the (87)Rb D1 line is demonstrated and relative frequency stability better than 10(-12) is measured for integration time spanning from 1 s to 1 day. The architecture demonstrated in this study is suitable for the realization of frequency modulatable lasers at any wavelength.
我们报道了一种基于自注入锁定到高品质因数回音壁模式微谐振器的频率可调谐795纳米半导体激光器的研制情况。该激光器的特点是残余幅度调制低于-80分贝，在100赫兹至10兆赫兹的偏移频率范围内，频率噪声优于300赫兹/赫兹（1/2）。该激光器的频率调制速度和范围分别超过1兆赫兹和4吉赫兹。演示了该激光器锁定到（87）Rb D1线的无多普勒饱和吸收共振，并在1秒至1天的积分时间内测量到相对频率稳定性优于10^(-12)。本研究中展示的架构适用于实现任何波长的频率可调谐激光器。
