Choi Kyeong-Keun, Kee Jong, Kwon Da-Jung, Kim Deok-Kee
J Nanosci Nanotechnol. 2014 Dec;14(12):9599-605. doi: 10.1166/jnn.2014.10177.
Electroless-plating Ni-B films have been evaluated for the application as the diffusion barrier and metal cap for copper integration. The effect of post plasma treatment in a hydrogen environment on the characteristics of Ni-B films such as chemical composition, surface roughness, crystallinity, and resistivity was investigated. By treating electroless-plating Ni-B films with H2 plasma, the resistance and the roughness of the films decreased. The leakage current of Ni-B bottom electrode/30-nm-thick Al2O3/Al top electrode structures improved after the H2 plasma treatment on the Ni-B films. 40 nm-thick electroless-plating Ni-B film was able to block Cu diffusion up to 350 degrees C.
化学镀镍硼薄膜已被评估用作铜集成的扩散阻挡层和金属帽。研究了在氢环境中进行等离子体后处理对镍硼薄膜的化学成分、表面粗糙度、结晶度和电阻率等特性的影响。通过用氢气等离子体处理化学镀镍硼薄膜,薄膜的电阻和粗糙度降低。在镍硼薄膜上进行氢气等离子体处理后,镍硼底部电极/30纳米厚氧化铝/铝顶部电极结构的漏电流得到改善。40纳米厚的化学镀镍硼薄膜能够在高达350摄氏度的温度下阻挡铜的扩散。