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具有大密度涨落的高密度流体中的微米级电击穿:数值模型与实验评估。

Micrometer-scale electrical breakdown in high-density fluids with large density fluctuations: Numerical model and experimental assessment.

作者信息

Muneoka Hitoshi, Urabe Keiichiro, Stauss Sven, Terashima Kazuo

机构信息

Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.

Japan Society for the Promotion of Science, Tokyo 102-0083, Japan.

出版信息

Phys Rev E Stat Nonlin Soft Matter Phys. 2015 Apr;91(4):042316. doi: 10.1103/PhysRevE.91.042316. Epub 2015 Apr 29.

DOI:10.1103/PhysRevE.91.042316
PMID:25974500
Abstract

Experimentally observed electrical breakdown voltages (U(B)) in high-pressure gases and supercritical fluids deviate from classical theories for low-pressure gas discharges, and the underlying breakdown mechanisms for the high-density fluids making the U(B) differ from those in the classical discharges are not yet well understood. In this study, we developed an electrical breakdown model for the high-density fluids taking into account the effects of density fluctuations and ion-enhanced field emission (IEFE). The model is based on the concept that a critical anomaly of the U(B) (local minimum near the critical point) is caused by long mean free electron path leading to a large first Townsend coefficient in locally low-density spatial domains generated by the density fluctuations. Also, a modified Paschen's curve considering the effect of the IEFE on the second Townsend coefficient was used to reproduce the U(B) curve in the high-density fluids. Calculations based on the novel model showed good agreements with the experimentally measured U(B) even near the critical point and it also suggested that the critical anomaly of the U(B) depends on the gap distance. These results indicate that both the density fluctuations and the IEFE have to be considered to comprehend the plasmas in high-density and density-fluctuating fluids.

摘要

在高压气体和超临界流体中,通过实验观测到的击穿电压(U(B))与低压气体放电的经典理论存在偏差,并且对于使U(B)不同于经典放电中的高密度流体的潜在击穿机制尚未得到充分理解。在本研究中,我们开发了一种用于高密度流体的击穿模型,该模型考虑了密度涨落和离子增强场发射(IEFE)的影响。该模型基于这样一种概念,即U(B)的临界异常(临界点附近的局部最小值)是由长平均自由电子路径导致的,这会在由密度涨落产生的局部低密度空间区域中产生较大的第一汤森德系数。此外,使用考虑了IEFE对第二汤森德系数影响的修正帕邢曲线来重现高密度流体中的U(B)曲线。基于该新模型的计算结果与实验测量的U(B)甚至在临界点附近都显示出良好的一致性,并且还表明U(B)的临界异常取决于间隙距离。这些结果表明,为了理解高密度和密度涨落流体中的等离子体,必须同时考虑密度涨落和IEFE。

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