新型薄氮化镓发光二极管结构采用微磨蚀表面，以便在紫外光下与传统垂直发光二极管进行比较。

Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light.

作者信息

Chiang Yen Chih, Lin Chien Chung, Kuo Hao Chung

机构信息

Institute of Lighting and Energy Photonics, National Chiao Tung University, No.301, Gaofa 3rd Rd., Guiren Dist., Tainan City, 71150 Taiwan.

Institute of Photonic System, National Chiao Tung University, No.301, Gaofa 3rd Rd., Guiren Dist., Tainan City, 71150 Taiwan.

出版信息

Nanoscale Res Lett. 2015 Apr 15;10:182. doi: 10.1186/s11671-015-0885-4. eCollection 2015.

DOI:10.1186/s11671-015-0885-4

PMID:25977655

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4404426/

Abstract

In this study, novel thin-GaN-based ultraviolet light-emitting diodes (NTG-LEDs) were fabricated using wafer bonding, laser lift-off, dry etching, textured surface, and interconnection techniques. Placing PN electrodes on the same side minimized the absorption caused by electrodes in conventional vertical injection light-emitting diodes (V-LEDs) and the current spreading was improved. The light output power (700 mA) of the NTG-LEDs was enhanced by 18.3% compared with that of the V-LEDs, and the external quantum efficiency (EQE) of the NTG-LEDs was also relatively enhanced by 20.0% compared with that of a reference device. When the current operations were 1,500 mA, the enhancements of the light output power and EQE were 27.4% and 27.2%, respectively. Additionally, the efficiency droop was improved by more than 15% at the same current level.

摘要

在本研究中，采用晶圆键合、激光剥离、干法蚀刻、纹理表面和互连技术制备了新型基于氮化镓的薄型紫外发光二极管（NTG-LED）。将PN电极置于同一侧可使传统垂直注入发光二极管（V-LED）中电极引起的吸收最小化，并改善电流扩展。与V-LED相比，NTG-LED的光输出功率（700 mA）提高了18.3%，与参考器件相比，NTG-LED的外量子效率（EQE）也相对提高了20.0%。当电流为1500 mA时，光输出功率和EQE的提高分别为27.4%和27.2%。此外，在相同电流水平下，效率下降改善了15%以上。