Balédent V, Rullier-Albenque F, Colson D, Ablett J M, Rueff J-P
Laboratoire de Physique des Solides, 91400 Orsay, France.
SPEC CEA l'Orme les merisiers, 91191 Gif-sur-Yvette Cedex, France.
Phys Rev Lett. 2015 May 1;114(17):177001. doi: 10.1103/PhysRevLett.114.177001. Epub 2015 Apr 30.
Using high-resolution, lifetime removed, x-ray absorption spectroscopy at the As K edge, we evidence the strong sensitivity of the As electronic structure upon electron doping with Co or pressure change in BaFe2As2, at room temperature. Our results unravel the prominent role played by As-4p orbitals in the electronic properties of the Fe pnictide superconductors. We propose a unique picture to describe the overall effect of both external parameter doping and pressure, resolving the apparent contradiction between angle-resolved photoemission spectroscopy, transport, and absorption results, with the As-p states as a key ingredient.
利用高分辨率、消除寿命影响的砷K边X射线吸收光谱，我们证明了在室温下，向BaFe2As2中进行钴电子掺杂或改变压力时，砷电子结构具有很强的敏感性。我们的结果揭示了As-4p轨道在铁基超导体电子性质中所起的重要作用。我们提出了一个独特的图景来描述外部参数掺杂和压力的综合效应，以As-p态作为关键因素解决了角分辨光电子能谱、输运和吸收结果之间明显的矛盾。
