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拓扑近藤绝缘体中的近藤击穿

Kondo breakdown in topological Kondo insulators.

作者信息

Alexandrov Victor, Coleman Piers, Erten Onur

机构信息

Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, USA.

Department of Physics, Royal Holloway, University of London, Egham, Surrey TW20 0EX, United Kingdom.

出版信息

Phys Rev Lett. 2015 May 1;114(17):177202. doi: 10.1103/PhysRevLett.114.177202. Epub 2015 Apr 28.

Abstract

Motivated by the observation of light surface states in SmB6, we examine the effects of surface Kondo breakdown in topological Kondo insulators. We present both numerical and analytic results which show that the decoupling of the localized moments at the surface disturbs the compensation between light and heavy electrons and dopes the Dirac cone. Dispersion of these uncompensated surface states is dominated by intersite hopping, which leads to much lighter quasiparticles. These surface states are also highly durable against the effects of surface magnetism and decreasing thickness of the sample.

摘要

受在SmB6中观察到的轻表面态的启发,我们研究了拓扑近藤绝缘体中表面近藤效应崩溃的影响。我们给出了数值和解析结果,表明表面局域磁矩的解耦扰乱了轻电子和重电子之间的补偿,并使狄拉克锥掺杂。这些未补偿表面态的色散由格点间跳跃主导,这导致了质量更轻的准粒子。这些表面态对表面磁性和样品厚度减小的影响也具有高度的耐久性。

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