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拓扑表面态在 Kondo 绝缘的六硼化钐中。

Topological surface state in the Kondo insulator samarium hexaboride.

机构信息

Department of Physics and Astronomy, University of California, Irvine, Irvine, California 92697, USA.

出版信息

Nat Mater. 2014 May;13(5):466-70. doi: 10.1038/nmat3913. Epub 2014 Mar 23.

Abstract

Topological invariants of electron wavefunctions in condensed matter reveal many intriguing phenomena. A notable example is provided by topological insulators, which are characterized by an insulating bulk coexisting with a metallic boundary state. Although there has been intense interest in Bi-based topological insulators, their behaviour is complicated by the presence of a considerable residual bulk conductivity. Theories predict that the Kondo insulator system SmB6, which is known to undergo a transition from a Kondo lattice metal to a small-gap insulator state with decreasing temperature, could be a topological insulator. Although the insulating bulk and metallic surface separation has been demonstrated in recent transport measurements, these have not demonstrated the topologically protected nature of the metallic surface state. Here we report thickness-dependent transport measurements on doped SmB6, and show that magnetic and non-magnetic doping results in contrasting behaviour that supports the conclusion that SmB6 shows virtually no residual bulk conductivity.

摘要

凝聚态物质中电子波函数的拓扑不变量揭示了许多有趣的现象。拓扑绝缘体就是一个显著的例子,其特征是在绝缘体内共存着金属边界态。尽管人们对基于 Bi 的拓扑绝缘体产生了浓厚的兴趣,但由于存在相当大的剩余体电导率,它们的行为变得复杂。理论预测,众所周知,Kondo 绝缘体系统 SmB6 随着温度的降低,从 Kondo 晶格金属转变为小能隙绝缘体状态,它可能是一个拓扑绝缘体。尽管最近的输运测量已经证明了绝缘体内和金属表面的分离,但这些测量并未证明金属表面态的拓扑保护性质。在这里,我们报告了掺杂 SmB6 的厚度依赖输运测量结果,并表明磁性和非磁性掺杂导致了相反的行为,这支持了 SmB6 实际上没有剩余体电导率的结论。

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